Invention Grant
US08796748B2 Transistors, methods of manufacture thereof, and image sensor circuits
有权
晶体管，其制造方法和图像传感器电路
- Patent Title: Transistors, methods of manufacture thereof, and image sensor circuits
- Patent Title (中): 晶体管，其制造方法和图像传感器电路
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Application No.: US13570157Application Date: 2012-08-08
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Publication No.: US08796748B2Publication Date: 2014-08-05
- Inventor: Fredrik Ramberg , Tse-Hua Lu , Tsun-Lai Hsu , Victor Chiang Liang , Chi-Feng Huang , Yu-Lin Wei , Shu Fang Fu
- Applicant: Fredrik Ramberg , Tse-Hua Lu , Tsun-Lai Hsu , Victor Chiang Liang , Chi-Feng Huang , Yu-Lin Wei , Shu Fang Fu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L29/808 ; H01L29/768 ; H01L29/78 ; H01L27/098 ; H01L27/146 ; H01L21/28
Abstract:
Transistors, methods of manufacturing thereof, and image sensor circuits are disclosed. In one embodiment, a transistor includes a buried channel disposed in a workpiece, a gate dielectric disposed over the buried channel, and a gate layer disposed over the gate dielectric. The gate layer comprises an I shape in a top view of the transistor.
Public/Granted literature
- US20140042506A1 Transistors, Methods of Manufacture Thereof, and Image Sensor Circuits Public/Granted day:2014-02-13
Information query
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