Invention Grant
- Patent Title: Reverse conductive nano array and manufacturing method of the same
- Patent Title (中): 反向导电纳米阵列及其制造方法相同
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Application No.: US13586435Application Date: 2012-08-15
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Publication No.: US08796749B2Publication Date: 2014-08-05
- Inventor: Shirong Liao , Jinlin Ye , Bo Liao , Jie Dong
- Applicant: Shirong Liao , Jinlin Ye , Bo Liao , Jie Dong
- Agency: Law Office of Michael Chen
- Agent Che-Yang Chen
- Main IPC: H01L31/0236
- IPC: H01L31/0236

Abstract:
A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.
Public/Granted literature
- US20140050492A1 REVERSE CONDUCTIVE NANO ARRAY AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2014-02-20
Information query
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