Invention Grant
US08796758B2 Selective epitaxial growth of semiconductor materials with reduced defects
有权
具有减少缺陷的半导体材料的选择性外延生长
- Patent Title: Selective epitaxial growth of semiconductor materials with reduced defects
- Patent Title (中): 具有减少缺陷的半导体材料的选择性外延生长
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Application No.: US13686708Application Date: 2012-11-27
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Publication No.: US08796758B2Publication Date: 2014-08-05
- Inventor: Jing-Cheng Lin , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762 ; H01L29/267 ; H01L29/165
Abstract:
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material.
Public/Granted literature
- US20130087831A1 Selective Epitaxial Growth of Semiconductor Materials with Reduced Defects Public/Granted day:2013-04-11
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