Invention Grant
- Patent Title: Semiconductor device comprising trench gate and buried source electrodes
- Patent Title (中): 半导体器件包括沟槽栅和掩埋源电极
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Application No.: US12242195Application Date: 2008-09-30
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Publication No.: US08796764B2Publication Date: 2014-08-05
- Inventor: Oliver Blank , Uli Hiller
- Applicant: Oliver Blank , Uli Hiller
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode.
Public/Granted literature
- US20100078718A1 SEMICONDUCTOR DEVICE AND METHODS FOR PRODUCING A SEMICONDUCTOR DEVICE Public/Granted day:2010-04-01
Information query
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