Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13554560Application Date: 2012-07-20
-
Publication No.: US08796782B2Publication Date: 2014-08-05
- Inventor: Takayuki Igarashi
- Applicant: Takayuki Igarashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-177404 20110815
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched thereby removing the portion of the CVD oxide film where the contact region is formed, leaving the portion covering the portion of the polysilicon film that serves as the resistor main body. BF2 is implanted by using the portions of the remaining CVD oxide films covering the polysilicon film as an implantation mask thereby forming a high concentration region in the contact region.
Public/Granted literature
- US20130043542A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-02-21
Information query
IPC分类:
