Invention Grant
- Patent Title: Method and structure of monolithetically integrated micromachined microphone using IC foundry-compatiable processes
- Patent Title (中): 使用IC铸造兼容工艺的单层集成微加工麦克风的方法和结构
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Application No.: US12490292Application Date: 2009-06-23
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Publication No.: US08796790B2Publication Date: 2014-08-05
- Inventor: Xiao (Charles) Yang
- Applicant: Xiao (Charles) Yang
- Applicant Address: US CA San Jose
- Assignee: mCube Inc.
- Current Assignee: mCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A monolithically integrated MEMS and CMOS substrates provided by an IC-foundry compatible process. The CMOS substrate is completed first using standard IC processes. A diaphragm with stress relief corrugated structure is then fabricated on top of the CMOS. Air vent holes are then etched in the CMOS substrate. Finally, the microphone device is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated microphone that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost. Using this architecture and fabrication flow, it is feasible and cost-effective to make an array of Silicon microphones for noise cancellation, beam forming, better directionality and fidelity.
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