Invention Grant
- Patent Title: Magnetoresistive element, magnetic random access memory and method of manufacturing the same
- Patent Title (中): 磁阻元件，磁性随机存取存储器及其制造方法
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Application No.: US12659273Application Date: 2010-03-02
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Publication No.: US08796793B2Publication Date: 2014-08-05
- Inventor: Yasuaki Ozaki , Hiroaki Honjyou
- Applicant: Yasuaki Ozaki , Hiroaki Honjyou
- Applicant Address: JP Kawasaki-shi, Kanagawa JP Tokyo
- Assignee: Renesas Electronics Corporation,NEC Corporation
- Current Assignee: Renesas Electronics Corporation,NEC Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-049757 20090303
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00
Abstract:
A magnetoresistive element includes: a lower magnetic layer; a barrier layer; and an upper magnetic layer. The barrier layer is provided on the lower magnetic layer. The upper magnetic layer is provided on the barrier layer. One of magnetization directions of the lower magnetic layer and the upper magnetic layer is fixed. The barrier layer has a first surface which includes a surface contacted with an upper surface of the lower magnetic layer. The upper magnetic layer has a second surface which includes a surface contacted with an upper surface of the barrier layer. Each of the first surface and the second surface is larger than the upper surface of the lower magnetic layer in area.
Public/Granted literature
- US20100230769A1 Magnetoresistive element, magnetic random access memory and method of manufacturing the same Public/Granted day:2010-09-16
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