Invention Grant
- Patent Title: Forming sensing elements above a semiconductor substrate
- Patent Title (中): 在半导体衬底上形成传感元件
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Application No.: US12107627Application Date: 2008-04-22
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Publication No.: US08796804B2Publication Date: 2014-08-05
- Inventor: Ke Chun Liu , Kuan-Chieh Huang , Chin-Min Lin , Ken Wen-Chien Fu , Mingo Lin
- Applicant: Ke Chun Liu , Kuan-Chieh Huang , Chin-Min Lin , Ken Wen-Chien Fu , Mingo Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.
Public/Granted literature
- US20090263674A1 Forming Sensing Elements above a Semiconductor Substrate Public/Granted day:2009-10-22
Information query
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