Invention Grant
- Patent Title: Semiconductor memory device and method of manufacturing the same
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US13420318Application Date: 2012-03-14
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Publication No.: US08796814B2Publication Date: 2014-08-05
- Inventor: Hirotaka Ogihara
- Applicant: Hirotaka Ogihara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2011-254158 20111121
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/8246
Abstract:
According to one embodiment, a semiconductor substrate device includes a plurality of memory elements formed on the top surface of a semiconductor substrate, interlayer insulating films buried between the adjacent memory elements, a protection film formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, and contacts formed in the interlayer insulating films. The protection film includes a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements and a second protection film formed on the first protection film. The first protection film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and the second protection film is made of a boron film or a boron nitride film.
Public/Granted literature
- US20130126995A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-05-23
Information query
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