Invention Grant
- Patent Title: Semiconductor wafer and semiconductor device wafer
- Patent Title (中): 半导体晶圆和半导体器件晶圆
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Application No.: US13356799Application Date: 2012-01-24
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Publication No.: US08796820B2Publication Date: 2014-08-05
- Inventor: Shusei Nemoto , Hisashi Mashiyama
- Applicant: Shusei Nemoto , Hisashi Mashiyama
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-013071 20110125
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A semiconductor wafer having a disc shape includes a chamfer provided around a circumferential edge of the wafer, and an anti-cracking and chipping groove provided in one or more areas around one circumference of an end face of the wafer along a circumferential direction of the end face. The anti-cracking and chipping groove is configured to prevent cracking or chipping of the end face in back grinding.
Public/Granted literature
- US20120187547A1 SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE WAFER Public/Granted day:2012-07-26
Information query
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