Invention Grant
- Patent Title: Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus
- Patent Title (中): 具有贯通电极的半导体装置及其制造方法以及电子设备
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Application No.: US13675561Application Date: 2012-11-13
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Publication No.: US08796823B2Publication Date: 2014-08-05
- Inventor: Tsuyoshi Yoda , Kazumi Hara
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2008-294772 20081118
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
Public/Granted literature
- US20130075896A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS Public/Granted day:2013-03-28
Information query
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