Invention Grant
- Patent Title: Semiconductor device including a DC-DC converter
- Patent Title (中): 包括DC-DC转换器的半导体器件
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Application No.: US14014286Application Date: 2013-08-29
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Publication No.: US08796827B2Publication Date: 2014-08-05
- Inventor: Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2004-106224 20040331
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L29/417

Abstract:
The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
Public/Granted literature
- US20140003002A1 Semiconductor Device Public/Granted day:2014-01-02
Information query
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