Invention Grant
US08796832B2 Wiring device for semiconductor device, composite wiring device for semiconductor device, and resin-sealed semiconductor device
有权
半导体装置用配线装置,半导体装置用复合布线装置以及树脂密封型半导体装置
- Patent Title: Wiring device for semiconductor device, composite wiring device for semiconductor device, and resin-sealed semiconductor device
- Patent Title (中): 半导体装置用配线装置,半导体装置用复合布线装置以及树脂密封型半导体装置
-
Application No.: US13403616Application Date: 2012-02-23
-
Publication No.: US08796832B2Publication Date: 2014-08-05
- Inventor: Susumu Baba , Masachika Masuda , Hiromichi Suzuki
- Applicant: Susumu Baba , Masachika Masuda , Hiromichi Suzuki
- Applicant Address: JP Tokyo
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2008-005521 20080115
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/498 ; H01L23/495

Abstract:
A wiring device for a semiconductor device, a composite wiring device for a semiconductor device and a resin-sealed semiconductor device are provided, each of which is capable of mounting thereon a semiconductor chip smaller than conventional chips and being manufactured at lower cost. The wiring device connects an electrode on a semiconductor chip with an external wiring device, and has an insulating layer, a metal substrate and a copper wiring layer. The wiring device has a semiconductor chip support portion provided on the side of the copper wiring layer with respect to the insulating layer. The copper wiring layer includes a first terminal, a second terminal and a wiring portion. The first terminal is connected with the electrode. The second terminal is connected with the external wiring device. The wiring portion connects the first terminal with the second terminal.
Public/Granted literature
Information query
IPC分类: