Invention Grant
US08796840B2 Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers
有权
半导体组件包括位于由第一和第二图案化聚合物层限定的单元上的功率半导体管芯
- Patent Title: Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers
- Patent Title (中): 半导体组件包括位于由第一和第二图案化聚合物层限定的单元上的功率半导体管芯
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Application No.: US13422050Application Date: 2012-03-16
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Publication No.: US08796840B2Publication Date: 2014-08-05
- Inventor: Wan-Lan Chiang , Kuang Hann Lin , Chih-Ping Peng
- Applicant: Wan-Lan Chiang , Kuang Hann Lin , Chih-Ping Peng
- Applicant Address: US NY Hauppauge
- Assignee: Vishay General Semiconductor LLC
- Current Assignee: Vishay General Semiconductor LLC
- Current Assignee Address: US NY Hauppauge
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer; Karin L. Williams
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/10 ; H01L21/00 ; H01L23/40 ; H01L23/367 ; H01L23/433 ; H01L23/495
Abstract:
A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from the first layer. The subassembly also includes a second patterned polymer layer disposed on a radially outer portion of the first patterned polymer layer. The first and second layers define a cell for accommodating a power semiconductor die. Solder material is disposed on the exposed portion of the heat sink surface and in the cell. A power semiconductor die is located within the cell on a radially inward portion of the first layer and thermally coupled to the heat sink by the solder material.
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