Invention Grant
- Patent Title: Bonding pad and method of making same
- Patent Title (中): 粘合垫及其制作方法
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Application No.: US13343940Application Date: 2012-01-05
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Publication No.: US08796851B2Publication Date: 2014-08-05
- Inventor: Chiang-Ming Chuang , Chun Che Huang , Shih-Chieh Chang
- Applicant: Chiang-Ming Chuang , Chun Che Huang , Shih-Chieh Chang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
The description relates to a bonding pad for a semiconductor device deposited. The first region comprising aluminum deposited at a high temperature having a large grain size. The second region comprising aluminum deposited at a lower temperature having a smaller grain size.
Public/Granted literature
- US20130175689A1 BONDING PAD AND METHOD OF MAKING SAME Public/Granted day:2013-07-11
Information query
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