Invention Grant
- Patent Title: Semiconductor devices with nonconductive vias
- Patent Title (中): 具有非导电通孔的半导体器件
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Application No.: US13350090Application Date: 2012-01-13
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Publication No.: US08796855B2Publication Date: 2014-08-05
- Inventor: Perry H. Pelley , Michael B. McShane , Tab A. Stephens
- Applicant: Perry H. Pelley , Michael B. McShane , Tab A. Stephens
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Mary Jo Bertani; David G. Dolezal
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
An electric device with vias that include dielectric structures to prevent conductive material in the vias from electrically connecting conductive structures on a top of the vias with conductive structures on the bottom of the vias. The dielectric structures are formed in selected vias where other vias do not include the dielectric structures.
Public/Granted literature
- US20130181350A1 SEMICONDUCTOR DEVICES WITH NONCONDUCTIVE VIAS Public/Granted day:2013-07-18
Information query
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