Invention Grant
- Patent Title: Plasma cell and method of manufacturing a plasma cell
- Patent Title (中): 等离子体电池及制造等离子体电池的方法
-
Application No.: US13366147Application Date: 2012-02-03
-
Publication No.: US08796927B2Publication Date: 2014-08-05
- Inventor: Dirk Meinhold
- Applicant: Dirk Meinhold
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01J17/49
- IPC: H01J17/49
Abstract:
A plasma cell and a method for making a plasma cell are disclosed. In accordance with an embodiment of the present invention, a cell comprises a semiconductor material, an opening disposed in the semiconductor material, a dielectric layer lining a surface of the opening, a cap layer closing the opening, a first electrode disposed adjacent the opening, and a second electrode disposed adjacent the opening.
Public/Granted literature
- US20130200786A1 Plasma Cell and Method of Manufacturing a Plasma Cell Public/Granted day:2013-08-08
Information query
