Invention Grant
- Patent Title: High-efficiency bias voltage generating circuit
- Patent Title (中): 高效偏置电压发生电路
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Application No.: US13960945Application Date: 2013-08-07
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Publication No.: US08797006B2Publication Date: 2014-08-05
- Inventor: Hsu Hung Kuo
- Applicant: Silergy Semiconductor Technology (Hangzhou) Ltd
- Applicant Address: CN Hangzhou
- Assignee: Silergy Semiconductor Technology (Hangzhou) Ltd
- Current Assignee: Silergy Semiconductor Technology (Hangzhou) Ltd
- Current Assignee Address: CN Hangzhou
- Agent Michael C. Stephens, Jr.
- Priority: CN201210301935 20120823
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H02M7/06

Abstract:
Disclosed are bias voltage generating circuits and methods for a switching power supply. In one embodiment, a switching power supply can include: (i) a driver circuit configured to receive a bias voltage, and to drive a switch in a power stage of the switching power supply; (ii) where a ratio of an output voltage of the switching power supply to an expected bias voltage of the driver circuit is configured as a proportionality coefficient; (iii) a bias voltage generating circuit configured to generate the bias voltage for the driver circuit based on a first voltage; and (iv) an H-shaped inductor coupled to an input of the bias voltage generating circuit, where the first voltage is configured to be generated based on a number of turns of the H-shaped inductor and the proportionality coefficient.
Public/Granted literature
- US20140056047A1 HIGH-EFFICIENCY BIAS VOLTAGE GENERATING CIRCUIT Public/Granted day:2014-02-27
Information query
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