Invention Grant
- Patent Title: Power amplifier device and power amplifier circuit thereof
- Patent Title (中): 功率放大器及其功率放大电路
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Application No.: US13521125Application Date: 2011-10-28
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Publication No.: US08797099B2Publication Date: 2014-08-05
- Inventor: Xiaojun Cui , Huazhang Chen , Jinyuan An , Jianli Liu
- Applicant: Xiaojun Cui , Huazhang Chen , Jinyuan An , Jianli Liu
- Applicant Address: CN Shenzhen, Guangdong Province
- Assignee: ZTE Corporation
- Current Assignee: ZTE Corporation
- Current Assignee Address: CN Shenzhen, Guangdong Province
- Agency: Ling and Yang Intellectual Property
- Agent Ling Wu; Stephen Yang
- Priority: CN201110111760 20110429
- International Application: PCT/CN2011/081489 WO 20111028
- International Announcement: WO2012/146016 WO 20121101
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F3/21 ; H03F3/60 ; H03F1/02
Abstract:
The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.
Public/Granted literature
- US20140125415A1 Power Amplifier Device and Power Amplifier Circuit Thereof Public/Granted day:2014-05-08
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