Invention Grant
US08797100B2 Circuit unit, bias circuit with circuit unit and differential amplifier circuit with first and second circuit unit
有权
电路单元，具有电路单元的偏置电路和具有第一和第二电路单元的差分放大器电路
- Patent Title: Circuit unit, bias circuit with circuit unit and differential amplifier circuit with first and second circuit unit
- Patent Title (中): 电路单元，具有电路单元的偏置电路和具有第一和第二电路单元的差分放大器电路
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Application No.: US13582132Application Date: 2010-03-05
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Publication No.: US08797100B2Publication Date: 2014-08-05
- Inventor: Bart Balm , Jeroen Bouwman , Léon C. M. van den Oever
- Applicant: Bart Balm , Jeroen Bouwman , Léon C. M. van den Oever
- Applicant Address: DE Munich
- Assignee: Epcos AG
- Current Assignee: Epcos AG
- Current Assignee Address: DE Munich
- Agency: Nixon Peabody LLP
- International Application: PCT/EP2010/052855 WO 20100305
- International Announcement: WO2011/107159 WO 20110909
- Main IPC: H03F3/16
- IPC: H03F3/16 ; H03F3/45
Abstract:
Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector (C) or an emitter (E) of the heterojunction bipolar transistor.
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