Invention Grant
- Patent Title: High frequency amplifier circuit
- Patent Title (中): 高频放大电路
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Application No.: US13554189Application Date: 2012-07-20
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Publication No.: US08797101B2Publication Date: 2014-08-05
- Inventor: Masaki Imagawa , Tsuneo Tokumitsu
- Applicant: Masaki Imagawa , Tsuneo Tokumitsu
- Applicant Address: JP Osaka JP Yokohama-shi
- Assignee: Sumitomo Electric Industries, Ltd.,Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Industries, Ltd.,Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Osaka JP Yokohama-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-159533 20110721
- Main IPC: H03F3/191
- IPC: H03F3/191

Abstract:
A high frequency amplifier circuit includes a first transistor that has a first terminal, a second terminal and a control terminal, the first terminal being grounded, a second transistor that has a first terminal, a second terminal and a control terminal, the control terminal of the second transistor being coupled to the second terminal of the first transistor, the first terminal of the second transistor being coupled to only the second terminal of the first transistor with respect to high frequency wave, the second terminal of the second transistor being coupled to a direct-current power supply, and a first resistor of which first terminal is coupled to a node between the second terminal of the first transistor and the control terminal of the second transistor, and of which second terminal is coupled to the first terminal of the second transistor.
Public/Granted literature
- US20130021102A1 HIGH FREQUENCY AMPLIFIER CIRCUIT Public/Granted day:2013-01-24
Information query
IPC分类: