Invention Grant
US08797798B2 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
有权
闪存EEPROM系统具有同时多个数据扇区编程和存储其他指定块中的物理块特性
- Patent Title: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
- Patent Title (中): 闪存EEPROM系统具有同时多个数据扇区编程和存储其他指定块中的物理块特性
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Application No.: US13957234Application Date: 2013-08-01
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Publication No.: US08797798B2Publication Date: 2014-08-05
- Inventor: Kevin M. Conley , John S. Mangan , Jeffrey G. Craig
- Applicant: SanDisk Corporation
- Applicant Address: US CA Sunnyvale
- Assignee: Sandisk Corporation
- Current Assignee: Sandisk Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.
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