Invention Grant
- Patent Title: Semiconductor device and semiconductor memory device
- Patent Title (中): 半导体器件和半导体存储器件
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Application No.: US13483590Application Date: 2012-05-30
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Publication No.: US08797808B2Publication Date: 2014-08-05
- Inventor: Jeongsu Jeong
- Applicant: Jeongsu Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C8/00 ; G11C19/00 ; G11C11/4076 ; G11C7/22
Abstract:
A semiconductor device includes: a non-volatile memory unit; a data bus configured to transfer data outputted from the non-volatile memory unit; a selection signal generation unit configured to generate a plurality of selection signals based on a clock; and a plurality of latch sets configured to each be enabled in response to a selection signal that corresponds to the latch set among the selection signals and store the data transferred through the data bus.
Public/Granted literature
- US20130322183A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-12-05
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