Invention Grant
- Patent Title: Memory system having delay-locked-loop circuit
- Patent Title (中): 具有延迟锁定环路的存储器系统
-
Application No.: US14185412Application Date: 2014-02-20
-
Publication No.: US08797812B2Publication Date: 2014-08-05
- Inventor: Jung-Hwan Choi
- Applicant: Jung-Hwan Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0000603 20100105
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C7/22 ; G11C11/4076 ; G11C7/10

Abstract:
A delay-locked-loop (DLL) circuit having a DLL that operates when an external clock signal has a low frequency and a DLL that operates when an external clock signal has a high frequency is disclosed. The DLL circuit includes a first DLL and second DLL. The first DLL adjusts a delay time of an external clock signal to generate a first internal clock signal synchronized with the external clock signal when the external clock signal has a low frequency. The second DLL adjusts the delay time of the external clock signal to generate a second internal clock signal synchronized with the external clock signal when the external clock signal has a high frequency.
Public/Granted literature
- US20140169119A1 MEMORY SYSTEM HAVING DELAY-LOCKED-LOOP CIRCUIT Public/Granted day:2014-06-19
Information query