A non-volatile memory cell using two transistors, a bit select and a sense device and an antifuse device. The antifuse device is implemented with a field-effect transistor operated to behave like an antifuse when the cell is selected and a modest programming voltage under 5.5 volts and a current under 5-μA is applied. Only a soft breakdown is needed in the thin gate oxide because a local sense transistor is used during read operations to detect the programming and amplify it for column sense amplifiers. Reading also only requires low voltages of about one volt.