Invention Grant
US08799557B1 System and method for non-volatile random access memory emulation
有权
用于非易失性随机存取存储器仿真的系统和方法
- Patent Title: System and method for non-volatile random access memory emulation
- Patent Title (中): 用于非易失性随机存取存储器仿真的系统和方法
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Application No.: US13272912Application Date: 2011-10-13
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Publication No.: US08799557B1Publication Date: 2014-08-05
- Inventor: Jyh-shing Chen
- Applicant: Jyh-shing Chen
- Applicant Address: US CA Sunnyvale
- Assignee: NetApp, Inc.
- Current Assignee: NetApp, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Kacvinsky Daisak Bluni, PLLC
- Main IPC: G06F9/455
- IPC: G06F9/455 ; G06F12/06

Abstract:
Described herein is a system and method for high speed non-volatile random access memory (NVRAM) emulation. The system and method may utilize a primary storage device and a volatile random access memory (RAM) device to emulate NVRAM functionality. The system and method may allocate a range of the primary storage device. The storage capacity or size of the allocated range may correspond or be at least partially based on a storage capacity or size of the volatile RAM device. Data, such as write requests, may be migrated from the primary storage device to the volatile RAM device. In the event of the unavailability, loss of power, or other such circumstances of the volatile RAM device, data from the volatile RAM device may be migrated back to the previously allocated range of the primary storage device.
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