Invention Grant
US08801279B2 Semiconductor device with stacked structure having through electrode, semiconductor memory device, semiconductor memory system, and operating method thereof
有权
具有通孔电极，半导体存储器件，半导体存储器系统及其操作方法的堆叠结构的半导体器件
- Patent Title: Semiconductor device with stacked structure having through electrode, semiconductor memory device, semiconductor memory system, and operating method thereof
- Patent Title (中): 具有通孔电极，半导体存储器件，半导体存储器系统及其操作方法的堆叠结构的半导体器件
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Application No.: US13177103Application Date: 2011-07-06
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Publication No.: US08801279B2Publication Date: 2014-08-12
- Inventor: Jung-sik Kim , Dong-hyuk Lee , Ho-cheol Lee , Jang-woo Ryu
- Applicant: Jung-sik Kim , Dong-hyuk Lee , Ho-cheol Lee , Jang-woo Ryu
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0137228 20101228
- Main IPC: H01L35/00
- IPC: H01L35/00 ; G01K13/00 ; H01L23/525 ; G01K13/10 ; H01L25/065 ; G01K7/01 ; H01L23/34 ; H01L23/00 ; H01L23/48
Abstract:
A semiconductor device, memory device, system, and method of using a stacked structure for stably transmitting signals among a plurality of semiconductor layers is disclosed. The device includes at least a first semiconductor chip including a first temperature sensor circuit configured to output first temperature information related to the first semiconductor chip, and at least one through substrate via.
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