Invention Grant
US08801500B2 Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers 有权
用于至少三个半导体晶片的两侧的同时进行材料去除处理的方法

  • Patent Title: Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers
  • Patent Title (中): 用于至少三个半导体晶片的两侧的同时进行材料去除处理的方法
  • Application No.: US13313114
    Application Date: 2011-12-07
  • Publication No.: US08801500B2
    Publication Date: 2014-08-12
  • Inventor: Georg Pietsch
  • Applicant: Georg Pietsch
  • Applicant Address: DE Munich
  • Assignee: Siltronic AG
  • Current Assignee: Siltronic AG
  • Current Assignee Address: DE Munich
  • Agency: Leydig, Voit & Mayer, Ltd.
  • Priority: DE102010063179 20101215
  • Main IPC: B24B1/00
  • IPC: B24B1/00 B24B7/17 B24B7/22
Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers
Abstract:
A method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers includes providing a double-side processing apparatus including two rotating ring-shaped working disks and a rolling apparatus. The carriers are arranged in the double-side processing apparatus and the openings are disposed in the carriers so as to satisfy the inequality: R/e·sin(π/N*)−r/e−1≦1.2 where N* denotes a ratio of the round angle and an angle at which adjacent carriers are inserted into the rolling apparatus with the greatest distance with respect to one another, r denotes a radius of each opening for receiving a respective semiconductor wafer, e denotes a radius of a pitch circle around a midpoint of the carrier on which the opening is arranged, and R denotes a radius of the pitch circle on which the carriers move between the working disks by means of the rolling apparatus.
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