Invention Grant
US08801972B2 Zinc chalcogenides, doped zinc chalcogenides, and methods of making
有权
锌硫属化物，掺杂锌硫族化合物，以及制备方法
- Patent Title: Zinc chalcogenides, doped zinc chalcogenides, and methods of making
- Patent Title (中): 锌硫属化物，掺杂锌硫族化合物，以及制备方法
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Application No.: US13371063Application Date: 2012-02-10
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Publication No.: US08801972B2Publication Date: 2014-08-12
- Inventor: S. Sundar Manoharan
- Applicant: S. Sundar Manoharan
- Applicant Address: IN Kanpur
- Assignee: Indian Institute of Technology Kanpur
- Current Assignee: Indian Institute of Technology Kanpur
- Current Assignee Address: IN Kanpur
- Agency: Foley & Lardner LLP
- Priority: IN384/DEL/2011 20110214; WOPCT/IB2011/051641 20110415
- Main IPC: H01B1/02
- IPC: H01B1/02
Abstract:
A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato)zM, wherein M is a metal ion and the value of z is equivalent to the oxidation state of the metal ion.
Public/Granted literature
- US20120205597A1 ZINC CHALCOGENIDES, DOPED ZINC CHALCOGENIDES, AND METHODS OF MAKING Public/Granted day:2012-08-16
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