Invention Grant
- Patent Title: Solar cell and process for producing the same
- Patent Title (中): 太阳能电池及其制造方法
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Application No.: US12820892Application Date: 2010-06-22
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Publication No.: US08802187B2Publication Date: 2014-08-12
- Inventor: Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
- Applicant: Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-038161 20070219
- Main IPC: H01L21/203
- IPC: H01L21/203 ; H01L51/00
Abstract:
The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
Public/Granted literature
- US20100261308A1 SOLAR CELL AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2010-10-14
Information query
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