Invention Grant
- Patent Title: Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
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Application No.: US13339609Application Date: 2011-12-29
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Publication No.: US08802201B2Publication Date: 2014-08-12
- Inventor: Petri Raisanen , Jung Sung-hoon , Verghese Mohith
- Applicant: Petri Raisanen , Jung Sung-hoon , Verghese Mohith
- Applicant Address: US AZ Phoenix
- Assignee: ASM America, Inc.
- Current Assignee: ASM America, Inc.
- Current Assignee Address: US AZ Phoenix
- Agency: Snell & Wilmer LLP
- Main IPC: H05H1/24
- IPC: H05H1/24
Abstract:
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
Public/Granted literature
- US20120098107A1 SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES Public/Granted day:2012-04-26
Information query
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