Invention Grant
- Patent Title: Laser diode and method of manufacturing the same
- Patent Title (中): 激光二极管及其制造方法
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Application No.: US13348501Application Date: 2012-01-11
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Publication No.: US08802458B2Publication Date: 2014-08-12
- Inventor: Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
- Applicant: Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JPP2008-279861 20081030; JPP2009-131264 20090529
- Main IPC: H01L33/36
- IPC: H01L33/36

Abstract:
A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
Public/Granted literature
- US20120107972A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-05-03
Information query
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