Invention Grant
- Patent Title: Surface repair structure and process for interconnect applications
- Patent Title (中): 互连应用的表面修复结构和过程
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Application No.: US13603051Application Date: 2012-09-04
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Publication No.: US08802563B2Publication Date: 2014-08-12
- Inventor: Chih-Chao Yang , Conal E. Murray
- Applicant: Chih-Chao Yang , Conal E. Murray
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method is provided which includes providing a dielectric material having a dielectric constant of about 4.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material and the upper surface of the at least one conductive material has hollow-metal related defects that extend inward into the at least one conductive material; and filling the hollow-metal related defects with a surface repair material.
Public/Granted literature
- US20120329270A1 SURFACE REPAIR STRUCTURE AND PROCESS FOR INTERCONNECT APPLICATIONS Public/Granted day:2012-12-27
Information query
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