Invention Grant
- Patent Title: Semiconductor constructions and memory arrays
- Patent Title (中): 半导体结构和存储器阵列
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Application No.: US13482672Application Date: 2012-05-29
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Publication No.: US08803118B2Publication Date: 2014-08-12
- Inventor: Andrea Redaelli , Cinzia Perrone
- Applicant: Andrea Redaelli , Cinzia Perrone
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
Public/Granted literature
- US20130320288A1 Semiconductor Constructions and Memory Arrays Public/Granted day:2013-12-05
Information query
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