Invention Grant
US08803149B2 Thin-film transistor device including a hydrogen barrier layer selectively formed over an oxide semiconductor layer
有权
薄膜晶体管器件包括选择性地形成在氧化物半导体层上的氢阻挡层
- Patent Title: Thin-film transistor device including a hydrogen barrier layer selectively formed over an oxide semiconductor layer
- Patent Title (中): 薄膜晶体管器件包括选择性地形成在氧化物半导体层上的氢阻挡层
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Application No.: US13473637Application Date: 2012-05-17
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Publication No.: US08803149B2Publication Date: 2014-08-12
- Inventor: Junichiro Sakata
- Applicant: Junichiro Sakata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-323725 20081219
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L29/12
Abstract:
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.
Public/Granted literature
- US20120223307A1 METHOD FOR MANUFACTURING TRANSISTOR Public/Granted day:2012-09-06
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