Invention Grant
- Patent Title: Nonvolatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US13331460Application Date: 2011-12-20
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Publication No.: US08803218B2Publication Date: 2014-08-12
- Inventor: Nam-Jae Lee
- Applicant: Nam-Jae Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0049239 20110524
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/762 ; H01L27/115 ; H01L29/423
Abstract:
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second sidewall and an upper surface of the floating gate, and a control gate formed over the dielectric layer.
Public/Granted literature
- US20120299081A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-11-29
Information query
IPC分类:
