Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13493579Application Date: 2012-06-11
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Publication No.: US08803237B2Publication Date: 2014-08-12
- Inventor: Takafumi Kuramoto , Yasutaka Nakashiba
- Applicant: Takafumi Kuramoto , Yasutaka Nakashiba
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-094877 20090409
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A distance “a” from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance “b” from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor.
Public/Granted literature
- US20120248543A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-04
Information query
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