Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13655873Application Date: 2012-10-19
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Publication No.: US08803244B2Publication Date: 2014-08-12
- Inventor: Hideki Mori
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2011-235046 20111026
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A semiconductor device includes a first conductivity type base formed on a surface of a substrate, a second conductivity type emitter formed on a surface of the base, a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged to be spaced apart on the surface of the base from the emitter, and a second conductivity type collector which is formed on an opposite side to the emitter and the doped region, interposing the base.
Public/Granted literature
- US20130105911A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-05-02
Information query
IPC分类:
