Invention Grant
- Patent Title: Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
- Patent Title (中): 接线端接结构包括保护环延伸件和制造并入其的电子器件的方法
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Application No.: US13024812Application Date: 2011-02-10
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Publication No.: US08803277B2Publication Date: 2014-08-12
- Inventor: Jason Henning , Qingchun Zhang , Sei-Hyung Ryu
- Applicant: Jason Henning , Qingchun Zhang , Sei-Hyung Ryu
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, PA
- Main IPC: H01L29/38
- IPC: H01L29/38
Abstract:
An electronic device includes a semiconductor layer, a primary junction in the semiconductor layer, a lightly doped region surrounding the primary junction and a junction termination structure in the lightly doped region adjacent the primary junction. The junction termination structure has an upper boundary, a side boundary, and a corner between the upper boundary and the side boundary, and the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner. At least one floating guard ring segment may be provided in the semiconductor layer outside the corner of the junction termination structure. Related methods are also disclosed.
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