Invention Grant
- Patent Title: Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof
- Patent Title (中): 能够降低电极间漏电流的半导体装置及其制造方法
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Application No.: US11745673Application Date: 2007-05-08
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Publication No.: US08803285B2Publication Date: 2014-08-12
- Inventor: Hiroto Ohtake , Naoya Inoue , Ippei Kume , Takeshi Toda , Yoshihiro Hayashi
- Applicant: Hiroto Ohtake , Naoya Inoue , Ippei Kume , Takeshi Toda , Yoshihiro Hayashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-130083 20060509
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor device has a capacitive structure formed by sequentially layering, on a wiring or conductive plug, a lower electrode, a capacitive insulation film, and an upper electrode. The semiconductor device has, as the capacitive structure, a thin-film capacitor having a lower electrode structure composed of an amorphous or microcrystalline film or a laminate of these films formed on a polycrystalline film.
Public/Granted literature
- US20070262417A1 SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INTERELECTRODE LEAK CURRENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2007-11-15
Information query
IPC分类:
