Invention Grant
US08803313B2 Group III nitride based flip-chip integrated circuit and method for fabricating
有权
III族氮化物倒装芯片集成电路及其制造方法
- Patent Title: Group III nitride based flip-chip integrated circuit and method for fabricating
- Patent Title (中): III族氮化物倒装芯片集成电路及其制造方法
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Application No.: US13591000Application Date: 2012-08-21
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Publication No.: US08803313B2Publication Date: 2014-08-12
- Inventor: Umesh Mishra , Primit Parikh , Yifeng Wu
- Applicant: Umesh Mishra , Primit Parikh , Yifeng Wu
- Applicant Address: US CA Goleta
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/48

Abstract:
A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circuit substrate and at least one of the terminals of the device is electrically connected to an active component on the circuit substrate. The active components on the substrate and the flip-chip mounted active semiconductor device, in combination with passive circuit elements, form preamplifiers and an output amplifier respectively. In a power switching configuration, the circuit substrate has logic control circuits on a first surface. A semiconductor transistor flip-chip mounted on the circuit substrate is electrically connected to the control circuits on the first surface to thereby control the on and off switching of the flip-chip mounted device.
Public/Granted literature
- US20120314371A1 GROUP III NITRIDE BASED FLIP-CHIP INTEGRATED CIRCUIT AND METHOD FOR FABRICATING Public/Granted day:2012-12-13
Information query
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