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US08803318B2 Semiconductor chips including passivation layer trench structure 有权
半导体芯片包括钝化层沟槽结构

Semiconductor chips including passivation layer trench structure
Abstract:
An integrated circuit including an active region a passive region and a cut line in the passive region includes a passivation layer that includes an outer nitride layer over an oxide layer. The integrated circuit also includes a crack stop below the passivation layer and in the passive region, and a solder ball in the active region. The passivation layer has a trench formed therein in a location that is further from the active region than the crack stop and closer to the active region than the cut line, the trench passing completely through the outer nitride layer and a least a portion of the way through the oxide layer.
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