Invention Grant
- Patent Title: Power amplification apparatus
- Patent Title (中): 功率放大装置
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Application No.: US13593431Application Date: 2012-08-23
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Publication No.: US08803613B2Publication Date: 2014-08-12
- Inventor: Ryo Mochizuki
- Applicant: Ryo Mochizuki
- Applicant Address: JP Minato-Ku, Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-Ku, Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2011-202245 20110915
- Main IPC: H03F3/191
- IPC: H03F3/191

Abstract:
According to one embodiment, a power amplification apparatus includes an field effect transistor (FET), a first decoupling element, a power supply circuit, a second decoupling element, and a third decoupling element. The FET is arranged within a package having an input terminal and an output terminal, and power-amplify an input signal from the input terminal to a transmission signal. The first decoupling element decreases an inductance component of the transmission signal output from the FET. The power supply circuit supplies a driving power to the FET. The second decoupling element cut an RF component. The third decoupling element decreases an impedance of a drain bias circuit over a wide band.
Public/Granted literature
- US20130069726A1 POWER AMPLIFICATION APPARATUS Public/Granted day:2013-03-21
Information query
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