Invention Grant
- Patent Title: Apparatus for and method of wafer edge exposure
- Patent Title (中): 晶圆边缘曝光装置及方法
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Application No.: US13091880Application Date: 2011-04-21
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Publication No.: US08804096B2Publication Date: 2014-08-12
- Inventor: Chin Cheng Yang
- Applicant: Chin Cheng Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Alston & Bird LLP
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03B27/54

Abstract:
An apparatus for wafer edge exposure comprises a first exposure unit and a second exposure unit. The first exposure unit includes a first light source to emit first light of multiple wavelengths, and a first mask to direct the first light toward a first area at an edge portion of a wafer. The second exposure unit includes a second light source to emit second light of a single wavelength, and a second mask to direct the second light toward a second area at the edge portion of the wafer. The second area encloses a transition area that borders the first area under the first mask.
Public/Granted literature
- US20120268721A1 APPARATUS FOR AND METHOD OF WAFER EDGE EXPOSURE Public/Granted day:2012-10-25
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