Invention Grant
US08804137B2 Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability 有权
确定临界尺寸均匀性和掩模版配合晶圆覆盖能力的独特标记和方法

Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
Abstract:
A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
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