Invention Grant
- Patent Title: Highly dielectric film having high withstanding voltage
- Patent Title (中): 高电介质薄膜具有高耐压
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Application No.: US12524283Application Date: 2008-01-24
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Publication No.: US08804307B2Publication Date: 2014-08-12
- Inventor: Meiten Koh , Kouji Yokotani , Miharu Matsumura , Eri Mukai , Nobuyuki Komatsu
- Applicant: Meiten Koh , Kouji Yokotani , Miharu Matsumura , Eri Mukai , Nobuyuki Komatsu
- Applicant Address: JP Osaka
- Assignee: Daikin Industries, Ltd.
- Current Assignee: Daikin Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-017117 20070126
- International Application: PCT/JP2008/050971 WO 20080124
- International Announcement: WO2008/090947 WO 20080731
- Main IPC: H01G4/08
- IPC: H01G4/08 ; H01G4/06 ; H01G4/20 ; C09D127/16 ; C08J5/18
Abstract:
The present invention relates to a highly dielectric film formed by using (A) a fluorine-containing resin comprising vinylidene fluoride unit and tetrafluoroethylene unit in a total amount of not less than 95% by mole, and provides a film for a film capacitor which has high dielectric property and high withstanding voltage and can be made thin.
Public/Granted literature
- US20100110609A1 HIGHLY DIELECTRIC FILM HAVING HIGH WITHSTANDING VOLTAGE Public/Granted day:2010-05-06
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