Invention Grant
- Patent Title: Low temperature double-layer capacitors using asymmetric and spiro-type quaternary ammonium salts
- Patent Title (中): 使用不对称和螺型季铵盐的低温双层电容器
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Application No.: US13006385Application Date: 2011-01-13
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Publication No.: US08804309B2Publication Date: 2014-08-12
- Inventor: Erik J. Brandon , Marshall C. Smart , William C. West
- Applicant: Erik J. Brandon , Marshall C. Smart , William C. West
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Canady & Lortz LLP
- Agent Bradley K. Lortz
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01M6/04

Abstract:
Double-layer capacitors capable of operating at extremely low temperatures (e.g., as low as −80° C.) are disclosed. Electrolyte solutions combining a base solvent (e.g., acetonitrile) and a cosolvent are employed to lower the melting point of the base electrolyte. Example cosolvents include methyl formate, ethyl acetate, methyl acetate, propionitrile, butyronitrile, and 1,3-dioxolane. A quaternary ammonium salt including at least one of triethylmethylammonium tetrafluoroborate (TEMATFB) and spiro-(1,1′)-bipyrrolidium tetrafluoroborate (SBPBF4), is used in an optimized concentration (e.g., 0.10 M to 0.75 M), dissolved into the electrolyte solution. Conventional device form factors and structural elements (e.g., porous carbon electrodes and a polyethylene separator) may be employed.
Public/Granted literature
- US20110170237A1 LOW TEMPERATURE DOUBLE-LAYER CAPACITORS USING ASYMMETRIC AND SPIRO-TYPE QUATERNARY AMMONIUM SALTS Public/Granted day:2011-07-14
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