Invention Grant
US08804417B2 Nonvolatile memory device including dummy memory cell and program method thereof
有权
包括虚拟存储器单元的非易失性存储器件及其程序方法
- Patent Title: Nonvolatile memory device including dummy memory cell and program method thereof
- Patent Title (中): 包括虚拟存储器单元的非易失性存储器件及其程序方法
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Application No.: US13157343Application Date: 2011-06-10
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Publication No.: US08804417B2Publication Date: 2014-08-12
- Inventor: Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
- Applicant: Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0055561 20100611
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06 ; G11C16/08 ; G11C16/10 ; G11C16/12 ; G11C16/22
Abstract:
A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
Public/Granted literature
- US20110305079A1 NONVOLATILE MEMORY DEVICE INCLUDING DUMMY MEMORY CELL AND PROGRAM METHOD THEREOF Public/Granted day:2011-12-15
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