A memory device that accurately tracks memory operations includes a vertical loopback for tracking a sense clock signal to a row address decoder, and read and write reference bit lines in a reference column that include loopbacks for vertically tracking a selected bit line during read and write operations. Preferably the widths of word lines and a sense line are equal to enable the sense line to horizontally track any selected word line. The memory device also includes tri-state input/output (I/O) latches to latch sense amplifier outputs. A drive circuit of the tri-state I/O latch is disabled when the output is available at the corresponding sense amplifier and enabled when the output is latched by the latch circuit.