Invention Grant
US08804442B2 Semiconductor memory device and read wait time adjustment method thereof, memory system, and semiconductor device 有权
半导体存储器件及其读取等待时间调整方法,存储器系统和半导体器件

  • Patent Title: Semiconductor memory device and read wait time adjustment method thereof, memory system, and semiconductor device
  • Patent Title (中): 半导体存储器件及其读取等待时间调整方法,存储器系统和半导体器件
  • Application No.: US14049029
    Application Date: 2013-10-08
  • Publication No.: US08804442B2
    Publication Date: 2014-08-12
  • Inventor: Atsuo Koshizuka
  • Applicant: Elpida Memory, Inc.
  • Applicant Address: LU Luxembourg
  • Assignee: PS4 Luxco S.A.R.L.
  • Current Assignee: PS4 Luxco S.A.R.L.
  • Current Assignee Address: LU Luxembourg
  • Agency: McGinn IP Law Group, PLLC
  • Priority: JP2009-007829 20090116
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Semiconductor memory device and read wait time adjustment method thereof, memory system, and semiconductor device
Abstract:
A system including a controller and a memory device interconnected to the controller; the controller includes a set of first terminals that is connected to the memory device through a set of first signal lines, and a control circuit configured to generate and output onto the set of first terminals edge specifying information that takes a selected one of first and second states, the edge specifying information being supplied to the memory device to cause the memory device to activate a data strobe signal at a first timing when the selected one of the edge specifying information is the first state and at a second timing, that is different from the first timing, when the edge specifying information is the second state. The control circuit is further configured to generate and output onto the set of first terminals a read command, the read command being supplied to the memory device.
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